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2009 -07-23 rev. 1.91 page 1 spp07n65c3, SPI07N65C3 spa07n65c3 coolmos? power transistor v ds 650 v r ds ( on ) 0.6 ? i d 7.3 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? high peak current capability ? improved transconductance ? pg-to-220-3 : fully isolated package (2500 vac; 1 minute) pg-to220-3 p g-to220 pg-to262-3-1 2 p - to220 - 3 - 1 2 3 1 p-to220-3-31 1 2 3 marking 07n65c3 07n65c3 07n65c3 type package spp07n65c3 p g -to220 SPI07N65C3 p g -to262-3 spa07n65c3 p g-to220-3 maximum ratings parameter symbol value unit spp_i spa continuous drain current t c = 25 c t c = 100 c i d 7.3 4.6 7.3 1) 4.6 1) a pulsed drain current, t p limited by t j ma x i d p uls 21.9 21.9 a avalanche energy, single pulse i d =1.5a, v dd =50v e as 230 230 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =2.5a, v dd =50v e ar 0.5 0.5 avalanche current, repetitive t a r limited by t j ma x i a r 2.5 2.5 a gate source voltage v gs 20 20 v gate source voltage ac (f >1hz) v gs 30 30 power dissipation, t c = 25c p tot 83 32 w operating and storage temperature t j , t st g -55...+150 c
2009-07-23 rev. 1.91 page 2 spp07n65c3, SPI07N65C3 spa07n65c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 7.3 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1.5 k/w thermal resistance, junction - case, fullpak r thjc _ fp - - 3.9 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja _ fp - - 80 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, wavesoldering inroaseors sold lerialaraerisis a nlessoerwiseseiied araeer ol ondiions ales ni in a rainsorereadownvolage rainoreavalane readownvolage 30 - gate threshold voltage v gs(th) i d =350 a, v gs =v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c t j =150c - - 0.5 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =4.6a t j =25c t j =150c - - 0.54 1.46 0.6 - gate input resistance r g f =1mhz, open drain - 0.8 -
2009-07-23 rev. 1.91 page 3 spp07n65c3, SPI07N65C3 spa07n65c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =4.6a - 6 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 790 - pf output capacitance c oss - 260 - reverse transfer capacitance c rss - 16 - effective output capacitance, 4) energy related c o(er) v gs =0v, v ds =0v to 480v - 30 - effective output capacitance, 5) time related c o(tr) - 55 - turn-on delay time t d(on) v dd =380v, v gs =0/13v, i d =7.3a, r g =12 , t j =125c - 6 - ns rise time t r - 3.5 - turn-off delay time t d(off) - 60 100 fall time t f - 7 15 gate charge characteristics gate to source charge q gs v dd =480v, i d =7.3a - 3 - nc gate to drain charge q gd - 9.2 - gate charge total q g v dd =480v, i d =7.3a, v gs =0 to 10v - 21 27 gate plateau voltage v (plateau) v dd =480v, i d =7.3a - 5.5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 5 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2009-07-23 rev. 1.91 page 4 spp07n65c3, SPI07N65C3 spa07n65c3 electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 7.3 a inverse diode direct current, pulsed i sm - - 21.9 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 400 600 ns reverse recovery charge q rr - 4 - c peak reverse recovery current i rrm - 28 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 800 - a/s typical transient thermal characteristics symbol value unit symbol value unit spp_i spa spp_i spa r th1 0.024 0.024 k/w c th1 0.00012 0.00012 ws/k r th2 0.046 0.046 c th2 0.0004578 0.0004578 r th3 0.085 0.085 c th3 0.000645 0.000645 r th4 0.308 0.195 c th4 0.001867 0.001867 r th5 0.317 0.45 c th5 0.004795 0.007558 r th6 0.112 2.511 c th6 0.045 0.412 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2009-07-23 rev. 1.91 page 5 spp07n65c3, SPI07N65C3 spa07n65c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 w 100 spp07n65c3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 4 8 12 16 20 24 28 w 34 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
2009-07-23 rev. 1.91 page 6 spp07n65c3, SPI07N65C3 spa07n65c3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v ds 25 v 0 4 8 12 16 a 24 i d 4,5v 5v 5,5v 6v 6,5v 7v 20v 10v 8v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 2 4 6 8 10 12 14 16 18 20 22 v 25 v ds 0 1 2 3 4 5 6 7 8 9 10 11 a 13 i d 4v 4.5v 5v 5.5v 6v 20v 8v 6.5v
2009-07-23 rev. 1.91 page 7 spp07n65c3, SPI07N65C3 spa07n65c3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 a 15 i d 0 1 2 3 4 5 6 7 8 10 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 8v 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 4.6 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.4 spp07n65c3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 2 4 6 8 10 12 14 16 18 20 a 24 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 7.3 a pulsed 0 4 8 12 16 20 24 28 nc 34 q gate 0 2 4 6 8 10 12 v 16 spp07n65c3 v gs 0,8 v ds max ds max v 0,2
2009-07-23 rev. 1.91 page 8 spp07n65c3, SPI07N65C3 spa07n65c3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp07n65c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 typ. switching time t = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =12 0 1 2 3 4 5 6 a 8 i d 0 10 20 30 40 50 60 70 ns 90 t td(off) tf td(on) tr 15 typ. switching time t = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =7.3 a 0 20 40 60 80 100 130 r g 0 50 100 150 200 250 300 350 400 ns 500 t td(off) td(on) tf tr 16 typ. drain current slope d i /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =7.3a 0 20 40 60 80 100 130 r g 0 500 1000 1500 2000 a/s 3000 d i /d t di/dt(on) di/dt(off)
2009-07-23 rev. 1.91 page 9 spp07n65c3, SPI07N65C3 spa07n65c3 17 typ. drain source voltage slope d v /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =7.3a 0 20 40 60 80 120 r g 0 10 20 30 40 50 60 70 80 v/ns 100 d v /d t dv/dt(on) dv/dt(off) 18 typ. switching losses e = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =12 0 1 2 3 4 5 6 a 8 i d 0 0.005 0.01 0.015 mws 0.025 e eon* eoff *) e on includes sdp06s60 diode commutation losses. 19 typ. switching losses e = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 20 40 60 80 100 130 r g 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 mws 0.2 e eon* eoff *) e on includes sdp06s60 diode commutation losses. 20 avalanche soa i ar = f ( t ar ) par.: t j 150 c
2009-07-23 rev. 1.91 page 10 spp07n65c3, SPI07N65C3 spa07n65c3 21 avalanche energy e as = f ( t i v v c t e v p r f f t e r f p r ivtg v r f t c t v ppc v r tit c f v t v v f v v c c i c c
2009-07-23 rev. 1.91 page 11 spp07n65c3, SPI07N65C3 spa07n65c3 25 typ. c oss stored energy oss = f ( ds ) 0 100 200 300 00 00 ds 0 05 1 15 2 25 3 35 5 j 55 oss definition of diodes switching characteristics
2009-07-23 rev. 1 .91 page 12 spp 0 7 n6 5 c3 , SPI07N65C3 sp 0 7 n6 5 c3 p 03
2009-07-23 rev. 1.91 page 13 spp 0 7 n6 5 c3 , SPI07N65C3 spa 0 7 n6 5 c3 p g -to-220-3 (fullpak)
2009-07-23 rev. 1.91 page 14 spp 0 7 n6 5c3, SPI07N65C3 spa 0 7 n6 5 c3 p g -to262-3, pg-to262-3 (i2-pak)
2009-07-23 rev. 1.91 page 15 spp 0 7 n6 5c3, SPI07N65C3 spa 0 7 n6 5 c3

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